Xie, Bing

Lecturer

Research Interests: Reliability of semiconductor devices

Office Phone: 86-10-6275 9297

Email: xieb@pku.edu.cn

Xie, Bing is a lecturer in the Department of Microelectronics, Peking University. She obtained her B.S. from Jilin University in 1990, and M.S. from Peking University in 1997, and Ph.D. from Peking University in 2010 respectively. His research interests include reliability of small scale devices or relating to reliability of small scale devices, Si/SiO2 interface physics and reliability of Flash Memory devices.

Xie, Bing has published many research papers about the reliability in small scale devices and Flash memories and wide-band gap devices. Most of them are published in International Journal of Electronics, Microelectronics Reliability, Electronics Letters, IEEE Transactions on Electron Devices，etc. She also acquired some patents. As a young backbone teacher of overseas research program which was funded by the China Scholarship Council, she has done research in the United States for a year. A few papers were published during the time. She also takes part in major projects of the National Natural Science Foundation of China, vital fund item which belongs to Ministry of Education and pre-research project. As a researcher in the project of international cooperation between Peking University and Motorola Company“reliability and lifetime prediction model for submicron MOSFETS”, a few reliability predict models based on 9nm-2nm oxide thickness MOSFET are put forward. She was awarded a bonus and a commendation for it.

As a researcher in the project “The Research on the Reliability of Small Dimension MOS Devices”, a method of dynamic relaxation spectrum was presented, so that the density of effective trap charges and the generation/capture cross sections of the trap can be extracted rapidly by this method. The project is a national key scientific and technological project. In addition, she took part in the projects “Study on the failure mechanism of deep submicron MOS devices and characterization technique” and “Study on the models for evaluating reliability of the ultra-thin tunnel oxide in EEPROM cells”. She used the Proportional Difference Operator Method for the study of Endurance Characteristics of Flash Memory.