Home

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Yang, Yuchao

Assistant Professor

Research Interests: Neuromorphic computing, memristive devices

Office Phone:

Email: yuchaoyang@pku.edu.cn

Biosketch

Yuchao Yang received Ph.D. degree from Tsinghua University in 2010. After that he joined University of Michigan, Ann Arbor, MI, USA as a postdoctoral Research Fellow and was promoted to Senior Research Fellow in 2013. He is now an Assistant Professor and Boya Young Scholar in Institute of Microelectronics, Peking University. His research interests include memristors, neuromorphic computing and atomic scale material characterization. He has published >70 papers in high-profile journals such as Nature Electronics, Nature Communications, Advanced Materials, Nano Letters, etc. and 6 book chapters (including 3 book chapters in English and 3 in Chinese). His papers have been cited over 4100 times, with an h-index of 26. He was invited to give >20 keynote/invited talks on international conferences and serve as technical program committee chair and member for 3 international conferences. He is a member of IEEE, MRS, RSC and ACS.

Awards/Honors

v  2018             MIT Technology Review Innovators Under 35 in China 2018

v  2018             Outstanding reviewer for Nanoscale

v  2017             Qiu Shi Outstanding Young Scholar Award

v  2017             Boya Young Scholar

v  2016             Top 10 reviewers for Nanoscale

v  2015             1000 Youth Talents Program of China

v  2012             National Natural Science Award (2nd class), China

v  2012             Outstanding achievement in natural science research (1st class), Ministry of Education of China

v  2010             Excellent talents in academic research of Tsinghua University  

Academic Services

l  Guest Editor, Special Focus on Memristive Devices and Neuromorphic Computing, SCIENCE CHINA Information Sciences

l  Technical Committee Chair – International Workshop on Future Computing

l  Technical Committee Member – China RRAM

l  Technical Committee Member – ICSICT

l  Reviewers for scientific journals including Nature ElectronicsNature CommunicationsNano LettersAdvanced Functional MaterialsNPG Asia MaterialsScientific ReportsNanoscaleApplied Physics LettersJournal of Materials ChemistryPhysical Chemistry Chemical PhysicsRSC AdvancesIEEE Transactions on Neural Networks and Learning SystemsIEEE Transactions on Very Large Scale Integration SystemsIEEE Electron Device LettersIEEE Transactions on Electron DevicesIEEE Journal on Emerging and Selected Topics in Circuits and SystemsACS Applied Materials & InterfacesScientific ReportsNanotechnologyJournal of Physics D: Applied PhysicsNanoscale Research LettersPhysica Status Solidi (RRL) - Rapid Research LettersMicroelectronic EngineeringJournal of Electronic MaterialsPhysica Status Solidi A: Applications and Materials ScienceAIP AdvancesApplied Physics AThin Solid FilmsMicroelectronics JournalMicroelectronics ReliabilitySCIENCE CHINA Information Sciences and conferences including ISCAS, ICSICT

l  Member of IEEE, MRS, ACS, RSC

Selected Publications

1.          Yuchao Yang* and Ru Huang, Probing memristive switching in nanoionic devices. Nature Electronics, 1, 274–287 (2018). (Editor Picks)

2.          Jiadi Zhu, Yuchao Yang*, Rundong Jia, Zhongxin Liang, Wen Zhu, Zia Ur Rehman, Lin Bao, Xiaoxian Zhang, Yimao Cai, Li Song & Ru Huang, Ion Gated Synaptic Transistors Based on Two-dimensional van der Waals Crystals with Tunable Diffusive Dynamics. Advanced Materials, 30, 1800195, 2018.

3.          Yuchao Yang*, Xiaoxian Zhang, Liang Qin, Qibin Zeng, Xiaohui Qiu* & Ru Huang*, Probing Nanoscale Oxygen Ion Motion in Memristive Systems. Nature Communications 8, 15173 (2017).

4.          Y. Yang, P. Gao, L. Li, X. Pan, S. Tappertzhofen, S. Choi, R. Waser, I. Valov, and W. D. Lu, Electrochemical dynamics of nanoscale metallic inclusions in dielectrics. Nature Communications 5, 4232 (2014).

Google Scholar citation: 248, Highly cited paper according to Essential Science Indicators.

Featured by >20 websites including nsf.govBBC NewsScienceDailyYahoo News Phys.orgR&D MagazinePhysics News etc.

5.          Y. Yang, P. Gao, S. Gaba, T. Chang, X. Pan, and W. Lu, Observation of Conducting Filament Growth in Nanoscale Resistive Memories. Nature Communications 3, 732 (2012).

Google Scholar citation: 574, Highly cited paper according to Essential Science Indicators.

6.          Y. C. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. Nano Letters 9, 1636 (2009).

Google Scholar citation: 700, Highly cited paper according to Essential Science Indicators.

Highlighted by NPG Asia Materials.

Excellent paper on Vacuum Science and Engineering in China in 2010.

7.          Y. Yang, S. Choi, and W. Lu, Oxide Heterostructure Resistive Memory. Nano Letters 13, 2908 (2013).

8.          Y. Yang, B. Chen, and W. D. Lu, Memristive Physically Evolving Networks Enabling Emulation of Heterosynaptic Plasticity. Advanced Materials 27, 7720-7727 (2015).

9.          Y. Yang, J. Lee, S. Lee, C.-H. Liu, Z. Zhong, and W. Lu, Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element. Advanced Materials 26, 3693 (2014).

10.      H. Liu, Q. Hua, R. Yu, Y. Yang, T. Zhang, Y. Zhang and C. Pan, A bamboo-like GaN microwire-based piezotronic memristor. Advanced Functional Materials 26, 5307-5314, 2016.

Book Chapters (with 3 other book chapters in Chinese)

l  Yuchao Yang, Ke Yang and Ru Huang, “Neuromorphic Devices and Networks Based on Memristors with Ionic Dynamics”, in Handbook of Memristor Networks, Georgios Sirakoulis, Andrew Adamatzky and Leon O. Chua (eds.), Springer, 2018.

l  Y. Yang, W. Lu, “Resistive-Random Access Memory Based on Amorphous Films”, in Nonvolatile Memories: Materials, Devices, and Applications, T. Y. Tseng and S. M. Sze (eds.), American Scientific Publishers, 2012.

l  Y. Yang, T. Chang and W. Lu, “Memristive Devices: Switching Effects, Modeling, and Applications” in Memristors and Memristive Systems, R. Tetzlaff (ed.), Springer, 2013.

Keynote/Invited Conference Presentations

1.        (keynote) “Understanding and Engineering Memristors for Computing Applications”, International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Athens, Greece, Apr 03 2017.

2.        (Invited) “Brain Inspired Nanoionic Devices and Networks for Efficient Computing”, International Workshop on Future Computing: Memristive Devices and Systems (IWOFC 2018), Shenzhen, China, December 17-18, 2018.

3.        (Invited) “Interfacial redox processes in memristive devices based on valence change and electrochemical metallization”, Faraday Discussions, Aachen, Germany, Oct. 15 - 17, 2018.

4.        (Invited) “Nonvolatile memristor as a new platform for non-von Neumann computing”, International Conference on Solid-State and Integrated Circuit Technology (ICSICT) 2018, Qingdao, China, Oct 31- Nov 3, 2018.

5.        (Invited) “Manipulation of ionic transport properties for synaptic elements with rich functionalities”, 2018 International Emergent Memory Symposium (IEMS-2018), Ji’an, Jiangxi, China, Aug. 31 - Sept. 2, 2018.

6.        (Invited) “Emerging computing hardware for future artificial intelligence”, 2018 Sino-Dutch International High Level Talent Forum, Beijing, China, Jul. 09-14, 2018.

7.        (Invited) “Nanoionics Enabled Devices and Networks for Efficient Computing”, International Conference on Memristive Materials, Devices & Systems (MEMRISYS), 2018, Beijing, China, Jul. 03-05, 2018.

8.        (Invited) “Emulation of the human brain by nanodevices at different scales”, CSTIC, Shanghai, China, Mar. 11-12, 2018.

9.        (Invited) “Switching Kinetics of Memristors by Nanoscale Characterization and Their Applications in Neuromorphic Computing”, MRS Fall Meeting, Boston, MA, USA, Nov. 27 - 30, 2017.

10.    (Invited) “Memristors for Memory and Computing Applications”, The International Photonics and Optoelectronics Meeting (POEM) 2017, Wuhan, China, Nov 3-5, 2017.

11.    (Invited) “Memristors for Emerging Memory and Computing Applications”, ASICON 2017, Guiyang, China, Oct. 25-28, 2017.

12.    (Invited) “Memristive Devices: Understanding of Filament Growth Dynamics and Computing Applications”, International Symposium of Memory Devices for Abundant Data Computing, Hongkong, Sept. 22 - 24, 2017.

13.    (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, International Workshop on Future Computing: Memristive Devices and Systems (IWOFC 2017), Beijing, China, September 1 - 2, 2017

14.    (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, The XXVI International Materials Research Congress (IMRC 2017), Cancun, Mexico, August 20 - 25, 2017

15.    (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, 3rd NANOMXCN: Mexico-China Workshop on Nano Materials/Science/Technology, Cancun, Mexico, August 19 - 21, 2017

16.    (Invited) “Deciphering Memristors for Computing Applications”, The 9th Joint Meeting of Chinese Physicists Worldwide (OCPA9), Beijing, China, July 17 - 20, 2017

17.    (Invited) “Deciphering Memristors for Computing Applications”, The 9th Joint Meeting of Chinese Physicists Worldwide (OCPA9), Beijing, China, July 17 - 20, 2017

18.    (Invited) “Ion Transport in Memristive Oxides and Its Computing Applications”, China RRAM, Soochow, China, Jun. 12 - 13, 2017.

19.    (Invited) “Resistive switching dynamics and beyond”, ICSICT, Hangzhou, China, Oct 28 2016.

20.    (Invited) “Memristive devices for brain inspired computing”, Workshop on Neuromorphic Devices and Computing Applications, Nanjing University, China, Jul 06 2016.

21.    (Invited) “Probing switching mechanism and dynamics of memristive devices”, Workshop on Memristor Theory, Device and Applications, HUST, Wuhan, China, Dec 17 2015.

22.    (Invited) “In situ TEM study on electrochemical dynamics in resistive random access memory”, 15th International Conference on Nanotechnology (IEEE Nano 2015), Rome, Italy, Jul 2015.

23.    (Invited) “Metal–Insulator Transition in Functionalized Graphene for Select Element of Resistive Memory”, MRS Spring meeting, San Francisco, CA, Apr 2014.

24.    (Invited) “RRAM filament structure and growth dynamics”, CSTIC 2014, Shanghai, China, Mar 2014.