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黄芊芊

职称:研究员

研究所:微纳电子学研究院

研究领域:新器件技术及应用

办公电话:86-10-62768703

电子邮件:hqq@pku.edu.cn

个人主页:

主要研究方向

隧穿器件、负电容器件等新机理器件技术,二维材料等新材料器件技术

 

科研/教育经历

2017-今,助理教授,研究员,博士生导师,北京大学

2015-2017,博士后,北京大学

2010-2015,博士,北京大学

2006-2010,学士,北京大学

 

主要荣誉与获奖

2017年 入选2017年度“未来女科学家计划”(全国共4名)

2016 博士学位论文被评为中国电子学会优秀博士论文(全国共20篇)

2016 北京大学优秀博士后荣誉称号

2016 被评为北京大学博雅博士后(Boya Postdoctoral Fellowship

2015 博士学位论文被评为北京大学优秀博士学位论文

2015 北京市普通高等学校优秀毕业生

2015 北京大学第十七届研究生学术十杰

2013-2014学年 北京大学国家奖学金

2012 教育部博士研究生学术新人奖

2012-2013学年 北京大学国家奖学金

2010-2015学年 北京大学博士研究生校长奖学金

 

研究成果概况

主要从事新型超低功耗微电子器件研究,研制出多种新机理超低功耗器件,打破了国际上硅基隧穿器件的亚阈摆幅纪录,实现了国际领先的综合性能水平,在隧穿技术方面做出了开拓性的贡献,相关成果被列入国际半导体技术路线指南(ITRS)。

已发表SCI/EI论文40余篇,其中以第一作者在微电子领域标志性顶级国际会议IEDM与VLSI上发表6篇。

已获得国际授权专利10余项、国内授权专利30余项,部分成果转移到中芯国际集成电路制造公司。

作为项目负责人,主持国家自然科学基金青年科学基金项目和中国博士后科学基金特别资助项目。

 

Selected Publications

1)       Cheng Chen, Qianqian Huang*, Jiadi Zhu, Yang Zhao, Lingyi Guo, Ru Huang*, “New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs”, IEEE Trans. Electron Devices, vol. 64, no. 8, pp. 3324-3330, 2017.

2)         Jiadi Zhu, Yang Zhao, Qianqian Huang*, Cheng Chen, Chunlei Wu, Rundong Jia, and Ru Huang*, “Design and Simulation of a Novel Graded-Channel Heterojunction Tunnel FET with High ION/IOFF Ratio and Steep Swing”, IEEE Electron Device Lett., vol. 38, no. 9, pp. 1200-1203, 2017.

3)         Yang Zhao, Chunlei Wu, Qianqian Huang*, Cheng Chen, Jiadi Zhu, Lingyi Guo, Rundong Jia, Zhu lv, Yuchao Yang, Ming Li*, Ru Huang*, “A Novel Tunnel FET Design through Adaptive Bandgap Engineering with Constant Sub-threshold Slope over 5 Decades of Current and High ION/IOFF Ratio”, IEEE Electron Device Lett., vol. 39, no. 5, 2017, pp. 540-543.

4)       Qianqian Huang, Rundong Jia, Jiadi Zhu, Zhu Lv, Jiaxin Wang, Cheng Chen, Yang Zhao, Runsheng Wang, Weihai Bu, Wenbo Wang, Jin Kang, Kelu Hua, Hanming Wu, Shaofeng Yu, Yangyuan Wang, Ru Huang, “Deep Insights into Dielectric Breakdown in Tunnel FETs with Awareness of Reliability and Performance Co-Optimization”, in IEDM Tech. Dig., 2016, pp. 782-785.

5)         Qianqian Huang, Rundong Jia, Cheng Chen, Hao Zhu, Lingyi Guo, Junyao Wang, Jiaxin Wang, Chunlei Wu, Runsheng Wang, Weihai Bu, Jing Kang, Wenbo Wang, Hanming Wu, Shiuh-Wuu Lee, Yangyuan Wang, Ru Huang, “First Foundry Platform of Complementary Tunnel-FETs in CMOS Baseline Technology for Ultralow-Power IoT Applications: Manufacturability, Variability and Technology Roadmap”, in IEDM Tech. Dig., 2015, pp. 604-607. (http://www.eetimes.com/document.asp?doc_id=1327958)

6)         Qianqian Huang, Ru Huang, Chunlei Wu, Hao Zhu, Cheng Chen, Jiaxin Wang, Lingyi Guo, Runsheng Wang, Le Ye and Yangyuan Wang, “Comprehensive Performance Re-assessment of TFETs with a Novel Design by Gate and Source Engineering from Device/Circuit Perspective”, in IEDM Tech. Dig., 2014, pp. 335 - 338.

7)         Qianqian Huang, Ru Huang, Cheng Chen, Chunlei Wu, Jiaxin Wang, Chao Wang, Yangyuan Wang, “Deep Insights into Low Frequency Noise Behavior of Tunnel FETs with Source Junction Engineering”, in VLSI Symp. Tech. Dig., 2014, pp. 88-89.

8)         Qianqian Huang, Ru Huang, Yue Pan, Shenghu Tan, Yangyuan Wang, “Resistive-Gate Field-Effect Transistor: a Novel Steep-Slope Device Based on a Metal-Insulator-Metal-Oxide Gate Stack”, IEEE Electron Device Lett.,vol. 35, no. 8, pp. 877-879, 2014.

9)       Qianqian Huang, Ru Huang, Shaowen Chen, Jundong Wu, Zhan Zhan, Yingxin Qiu, and Yangyuan Wang, “Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism,” Semicond. Sci. Tech.,vol.29, no. 9, pp. 095013, 2014. (IOP select)

10)        Qianqian Huang, Ru Huang, Zhan Zhan, Yingxin Qiu, Wenzhe Jiang, Chunlei Wu, Yangyuan Wang, “A Novel Si Tunnel FET with 36mV/dec Subthreshold Slope Based on Junction Depleted-Modulation through Striped Gate Configuration”, in IEDM Tech. Dig., 2012, pp. 187 - 190.

11)        Qianqian Huang, Zhan Zhan, Ru Huang , Xiang Mao, Lijie Zhang, Yingxin Qiu, Yangyuan Wang, "Self-Depleted T-gate Schottky Barrier Tunneling FET with Low Average Subthreshold Slope and High ION/IOFF by Gate Configuration and Barrier Modulation", in IEDM Tech. Dig., 2011, pp. 382-385.

12)       Qianqian Huang, Ru Huang, Zhenhua Wang, Zhan Zhan, and Yangyuan Wang, "Schottky barrier impact-ionization metal-oxide-semiconductor device with reduced operating voltage", Appl. Phys. Lett., 99, 083507 (2011).