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杨玉超

职称:研究员

研究所:微纳电子学研究院

研究领域:类脑计算、智能硬件、忆阻器

办公电话:86-10-62752082

电子邮件:yuchaoyang@pku.edu.cn

个人主页:http://www.ime.pku.edu.cn/newsshow.php?id=65&cid=177 https://scholar.google.com.sg/citations?user=7qXSbHgAAAAJ&hl=zh-CN&oi=ao

Awards/honors

2017    求是杰出青年学者奖

2017    博雅青年学者

2016    Top 10 reviewers for Nanoscale

2012    国家自然科学二等奖

2012    教育部自然科学一等奖

2010    清华大学第十五届“学术新秀”


Research summary

杨玉超2010年于清华大学获得工学博士学位,2010至2015年在美国密歇根大学安娜堡分校从事忆阻器与类脑计算研究,先后任博士后、高级研究员。2015年加入北京大学信息科学技术学院,特聘研究员、博士生导师、国家重点研发计划青年项目首席科学家。长期从事类脑计算和新型逻辑、存储器件研究工作,迄今为止共在Nature Electronics、Nature Communications、Advanced Materials、Nano Letters等国际著名学术期刊上发表论文50余篇,被引用3400余次,H因子为24,4篇文章入选ESI高被引论文。研究工作被美国自然科学基金官方网站、BBC新闻、ScienceDaily、Yahoo新闻、Phys.org、nanotechweb.org等几十家网站重点报道,获得香港求是科技基金会“求是杰出青年学者奖”。

 

Selected Publications

1. Yuchao Yang* and Ru Huang, Probing memristive switching in nanoionic devices. Nature Electronics, 1, 274–287 (2018).

2. Jiadi Zhu, Yuchao Yang*, Rundong Jia, Zhongxin Liang, Wen Zhu, Zia Ur Rehman, Lin Bao, Xiaoxian Zhang, Yimao Cai, Li Song & Ru Huang, Ion Gated Synaptic Transistors Based on Two-dimensional van der Waals Crystals with Tunable Diffusive Dynamics. Advanced Materials, DOI: 10.1002/adma.201800195, 2018.

3. Yuchao Yang*, Xiaoxian Zhang, Liang Qin, Qibin Zeng, Xiaohui Qiu* & Ru Huang*, Probing Nanoscale Oxygen Ion Motion in Memristive Systems. Nature Communications 8, 15173 (2017).

4. Y. Yang, P. Gao, L. Li, X. Pan, S. Tappertzhofen, S. Choi, R. Waser, I. Valov, and W. D. Lu, Electrochemical dynamics of nanoscale metallic inclusions in dielectrics. Nature Communications 5, 4232 (2014).

Google Scholar citation: 181, Highly cited paper according to Essential Science Indicators.

Featured by >20 websites including nsf.gov、BBC News、ScienceDaily、Yahoo News、 Phys.org、R&D Magazine、Physics News etc.

5.Y. Yang, P. Gao, S. Gaba, T. Chang, X. Pan, and W. Lu, Observation of Conducting Filament Growth in Nanoscale Resistive Memories. Nature Communications 3, 732 (2012).

Google Scholar citation: 492, Highly cited paper according to Essential Science Indicators.

6. Y. C. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. Nano Letters 9, 1636 (2009).

Google Scholar citation: 633, Highly cited paper according to Essential Science Indicators.

Highlighted by NPG Asia Materials.

Excellent paper on Vacuum Science and Engineering in China in 2010.

7. Y. Yang, S. Choi, and W. Lu, Oxide Heterostructure Resistive Memory. Nano Letters 13, 2908 (2013). Google Scholar citation: 110

8. Y. Yang, B. Chen, and W. D. Lu, Memristive Physically Evolving Networks Enabling Emulation of Heterosynaptic Plasticity. Advanced Materials 27, 7720-7727 (2015).

9.Y. Yang, J. Lee, S. Lee, C.-H. Liu, Z. Zhong, and W. Lu, Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element. Advanced Materials 26, 3693 (2014).

10. H. Liu, Q. Hua, R. Yu, Y. Yang, T. Zhang, Y. Zhang and C. Pan, A bamboo-like GaN microwire-based piezotronic memristor. Advanced Functional Materials 26, 5307-5314, 2016.

 

Book Chapters

1. Yuchao Yang*, Ke Yang and Ru Huang*, “Neuromorphic Devices and Networks Based on Memristors with Ionic Dynamics”, in Handbook of Memristor Networks, Georgios Sirakoulis, Andrew Adamatzky and Leon O. Chua (eds.), Springer, 2018.

2.Y. Yang, T. Chang and W. Lu, “Memristive Devices: Switching Effects, Modeling, and Applications” in Memristors and Memristive Systems, R. Tetzlaff (ed.), Springer, 2014.

3. Y. Yang, W. Lu, “Resistive-Random Access Memory Based on Amorphous Films”, in Nonvolatile Memories: Materials, Devices, and Applications, T. Y. Tseng and S. M. Sze (eds.), American Scientific Publishers, 2012.


Keynote and invited Talks

1.   (keynote) “Understanding and Engineering Memristors for Computing Applications”, International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Athens, Greece, Apr 03 2017.

2.  (Invited) “Emulation of the human brain by nanodevices at different scales”, CSTIC, Shanghai, China, Mar. 11-12, 2018.

3.  (Invited) “Switching Kinetics of Memristors by Nanoscale Characterization and Their Applications in Neuromorphic Computing”, MRS Fall Meeting, Boston, MA, USA, Nov. 27 - 30, 2017.

4.  (Invited) “Memristors for Memory and Computing Applications”, The International Photonics and Optoelectronics Meeting (POEM) 2017, Wuhan, China, Nov 3-5, 2017.

5.  (Invited) “Memristors for Emerging Memory and Computing Applications”, ASICON 2017, Guiyang, China, Oct. 25-28, 2017.

6. (Invited) “Memristive Devices: Understanding of Filament Growth Dynamics and Computing Applications”, International Symposium of Memory Devices for Abundant Data Computing, Hongkong, Sept. 22 - 24, 2017.

7. (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, International Workshop on Future Computing: Memristive Devices and Systems (IWOFC 2017), Beijing, China, September 1 - 2, 2017

8. (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, The XXVI International Materials Research Congress (IMRC 2017), Cancun, Mexico, August 20 - 25, 2017

9. (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, 3rd NANOMXCN: Mexico-China Workshop on Nano Materials/Science/Technology, Cancun, Mexico, August 19 - 21, 2017

10.(Invited) “Deciphering Memristors for Computing Applications”, The 9th Joint Meeting of Chinese Physicists Worldwide (OCPA9), Beijing, China, July 17 - 20, 2017

11. (Invited) “Deciphering Memristors for Computing Applications”, The 9th Joint Meeting of Chinese Physicists Worldwide (OCPA9), Beijing, China, July 17 - 20, 2017

12. (Invited) “Ion Transport in Memristive Oxides and Its Computing Applications”, China RRAM, Soochow, China, Jun. 12 - 13, 2017.

13. (Invited) “Resistive switching dynamics and beyond”, ICSICT, Hangzhou, China, Oct 28 2016.

14. (Invited) “Memristive devices for brain inspired computing”, Workshop on Neuromorphic Devices and Computing Applications, Nanjing University, China, Jul 06 2016.

15. (Invited) “Probing switching mechanism and dynamics of memristive devices”, Workshop on Memristor Theory, Device and Applications, HUST, Wuhan, China, Dec 17 2015.

16. (Invited) “In situ TEM study on electrochemical dynamics in resistive random access memory”, 15th International Conference on Nanotechnology (IEEE Nano 2015), Rome, Italy, Jul 2015.

17. (Invited) “Metal–Insulator Transition in Functionalized Graphene for Select Element of Resistive Memory”, MRS Spring meeting, San Francisco, CA, Apr 2014.

18.  (Invited) “RRAM filament structure and growth dynamics”, CSTIC 2014, Shanghai, China, Mar 2014.

19.  (Invited) “Brain-inspired Neuromorphic Devices and Networks”, 中国科学院青年创新促进会化学与材料分会2018年学术工作年会暨第二届能源化学与材料国际青年论坛, 2018年4月27日, 宁波.

20.  (Invited) “忆阻神经形态器件”, 2018 年“脑与类脑计算前沿”思达论坛(STARS Conference), 西双版纳, China, April 6 - 9, 2018.

21.  (keynote) “Memristive Devices for Brain Inspired Computing”, 2017年度第二届青年纳米论坛, 2017年10月30日, 北京.

 

Academic services

 Guest Editor, Special Focus on Memristive Devices and Neuromorphic Computing, SCIENCE CHINA Information Sciences

未来计算国际研讨会(International Workshop on Future Computing)技术程序委员会主席

中国阻变存储器国际会议(China RRAM)技术程序委员会委员

 固态与集成电路技术国际会议(ICSICT)技术程序委员会委员

2016年中国电子学会青年学术年会“神经形态器件”专题召集人

 IEEE、MRS、ACS、RSC Member

中国电子学会会员

中国电子学会青年科学家俱乐部成员

32种同行评议类学术期刊包括Nature Electronics、Nature Communications、Nano Letters、Advanced Functional Materials等与业内重要学术会议ISCAS、ICSICT等审稿人。