师资队伍

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刘飞

职称:研究员

研究所:微纳电子学研究所

研究领域:新型逻辑和存储器件,微纳电子器件模型模拟,纳电子器件与电路协同设计

办公电话:86-10-6275 0412

电子邮件:feiliu@pku.edu.cn

个人主页:

教育背景

2013年毕业于北京大学信息科学技术学院并获理学博士学位,随后在香港大学、加拿大麦吉尔大学从事博士后研究工作,2016年任香港大学研究助理教授,2018年11月起任北京大学微纳电子学系研究员,博士生导师。

主要研究领域

新型逻辑和存储器件, 微纳电子器件模型模拟,纳电子器件与电路协同设计。

代表性学术论著

1. Fei Liu, Chenguang Qiu, Zhiyong Zhang, Lian-Mao Peng, Jian Wang, Zhenhua Wu, and Hong Guo, “First principles simulation of energy efficient switching by source density of states engineering,” IEEE 2018 International Electron Devices Meeting (IEDM), 763, 2018.

2. Fei Liu, Chenguang Qiu, Zhiyong Zhang, Lian-Mao Peng, Jian Wang, and Hong Guo, “Dirac electrons at the source: breaking the 60 mV/decade switching limit,” IEEE Trans. Electron Devices, 65, 2736 (2018).

3. Chenguang Qiu, Fei Liu, Lin Xu, Bing Deng, Mengmeng Xiao, Jia Si, Li Lin, Zhiyong Zhang, Jian Wang, Hong Guo, Hailin Peng, and Lian-Mao Peng, “Dirac source field-effect transistors as energy-efficient and high-performance electronic switches,” Science, 361, 387 (2018).

4. Fei Liu, Yan Zhou, Yijiao Wang, Xiaoyan Liu, Jian Wang, and Hong Guo, “Negative capacitance transistors with monolayer black phosphorus,” NPJ Quantum Materials, 1, 16004 (2016).

5. Fei Liu, Qing Shi, Jian Wang, and Hong Guo, “Device performance of multilayer black phosphorus tunneling transistors,” Appl. Phys. Lett., 107, 203501 (2015, Featured by Pick of the Week).

6. Fei Liu, Yijiao Wang, Xiaoyan Liu, Jian Wang, and Hong Guo, “A theoretical investigation of orientation dependent transport in monolayer MoS2 transistors at the ballistic limit,” IEEE Electron Device Lett., 36, 1091 (2015).