师资队伍

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

杨玉超

职称:研究员

研究所:微纳电子学研究院

研究领域:类脑计算、智能硬件、忆阻器

办公电话:86-10-62752082

电子邮件:yuchaoyang@pku.edu.cn

个人主页:https://scholar.google.com/citations?user=7qXSbHgAAAAJ&hl=en&oi=ao

Awards/honors

2019      北京市科学技术奖二等奖(第四完成人)

2018      《麻省理工科技评论》中国区35岁以下科技创新35人

2018      北京大学第十八届青年教师教学基本功比赛理工组二等奖

2018      Outstanding reviewer for Nanoscale

2017      求是杰出青年学者奖

2017      博雅青年学者

2016      Top 10 reviewers for Nanoscale

2012      国家自然科学二等奖(第四完成人)

2012      教育部自然科学一等奖(第四完成人)

2010      清华大学第十五届“学术新秀”

Research summary

      长期从事类脑计算和新型逻辑、存储器件研究工作,迄今为止共在Nature Electronics、Nature Communications、Advanced Materials、Nano Letters等国际著名学术期刊上发表论文70余篇,被引用4000余次,H因子为26,1篇文章入选TOP 0.1% ESI热点论文,5篇文章入选TOP 1% ESI高被引论文。研究工作被美国自然科学基金官方网站、BBC新闻、ScienceDaily、Yahoo新闻、Phys.org、nanotechweb.org等几十家网站重点报道。2017年被香港求是科技基金会授予“求是杰出青年学者奖”,2018年入选《麻省理工科技评论》中国区35岁以下科技创新35人。

Selected Publications

1.        Yuchao Yang* and Ru Huang, Probing memristive switching in nanoionic devices. Nature Electronics, 1, 274–287 (2018). (Editor Picks)

2.          Jiadi Zhu, Yuchao Yang*, Rundong Jia, Zhongxin Liang, Wen Zhu, Zia Ur Rehman, Lin Bao, Xiaoxian Zhang, Yimao Cai, Li Song & Ru Huang, Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics. Advanced Materials, 30, 1800195, 2018.

3.          Yuchao Yang*, Xiaoxian Zhang, Liang Qin, Qibin Zeng, Xiaohui Qiu* & Ru Huang*, Probing Nanoscale Oxygen Ion Motion in Memristive Systems. Nature Communications 8, 15173 (2017).

4.          Y. Yang, P. Gao, L. Li, X. Pan, S. Tappertzhofen, S. Choi, R. Waser, I. Valov, and W. D. Lu, Electrochemical dynamics of nanoscale metallic inclusions in dielectrics. Nature Communications 5, 4232 (2014).

Google Scholar citation: 248, Highly cited paper according to Essential Science Indicators.

Featured by >20 websites including nsf.govBBC NewsScienceDailyYahoo News Phys.orgR&D MagazinePhysics News etc.

5.          Y. Yang, P. Gao, S. Gaba, T. Chang, X. Pan, and W. Lu, Observation of Conducting Filament Growth in Nanoscale Resistive Memories. Nature Communications 3, 732 (2012).

Google Scholar citation: 574, Highly cited paper according to Essential Science Indicators.

6.          Y. C. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. Nano Letters 9, 1636 (2009).

Google Scholar citation: 700, Highly cited paper according to Essential Science Indicators.

Highlighted by NPG Asia Materials.

Excellent paper on Vacuum Science and Engineering in China in 2010.

7.          Y. Yang, S. Choi, and W. Lu, Oxide Heterostructure Resistive Memory. Nano Letters 13, 2908 (2013).

8.          Y. Yang, B. Chen, and W. D. Lu, Memristive Physically Evolving Networks Enabling Emulation of Heterosynaptic Plasticity. Advanced Materials 27, 7720-7727 (2015).

9.          Y. Yang, J. Lee, S. Lee, C.-H. Liu, Z. Zhong, and W. Lu, Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element. Advanced Materials 26, 3693 (2014).

10.      H. Liu, Q. Hua, R. Yu, Y. Yang, T. Zhang, Y. Zhang and C. Pan, A bamboo-like GaN microwire-based piezotronic memristor. Advanced Functional Materials 26, 5307-5314, 2016.

Book Chapters

1.        Yuchao Yang*, Ke Yang and Ru Huang*, “Neuromorphic Devices and Networks Based on Memristors with Ionic Dynamics”, in Handbook of Memristor Networks, Georgios Sirakoulis, Andrew Adamatzky and Leon O. Chua (eds.), Springer, 2018.

2.        Y. Yang, T. Chang and W. Lu, “Memristive Devices: Switching Effects, Modeling, and Applications” in Memristors and Memristive Systems, R. Tetzlaff (ed.), Springer, 2014.

3.        Y. Yang, W. Lu, “Resistive-Random Access Memory Based on Amorphous Films”, in Nonvolatile Memories: Materials, Devices, and Applications, T. Y. Tseng and S. M. Sze (eds.), American Scientific Publishers, 2012.

4.      杨玉超,吴南健,马德,黄如,“类脑计算芯片”,《中国人工智能2.0发展战略研究》,浙江大学出版社,2018。

Keynote and invited Talks

1.      (keynote) “Understanding and Engineering Memristors for Computing Applications”, International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Athens, Greece, Apr 03 2017.

2.        (Invited) “Brain Inspired Nanoionic Devices and Networks for Efficient Computing”, International Workshop on Future Computing: Memristive Devices and Systems (IWOFC 2018), Shenzhen, China, December 17-18, 2018.

3.      (Invited) “类脑智能芯片发展现状及展望”, 中国集成电路产业促进大会(中国芯大会), 重庆, 中国, 11月8-9日, 2018.

4.        (Invited) “Interfacial redox processes in memristive devices based on valence change and electrochemical metallization”, Faraday Discussions, Aachen, Germany, Oct. 15 - 17, 2018.

5.        (Invited) “Nonvolatile memristor as a new platform for non-von Neumann computing”, International Conference on Solid-State and Integrated Circuit Technology (ICSICT) 2018, Qingdao, China, Oct 31- Nov 3, 2018.

6.        (Invited) “Manipulation of ionic transport properties for synaptic elements with rich functionalities”, 2018 International Emergent Memory Symposium (IEMS-2018), Ji’an, Jiangxi, China, Aug. 31 - Sept. 2, 2018.

7.      (Invited) “基于纳米离子栅控的新型神经形态器件研究”, 中国真空学会2018学术年会, 长春, 吉林, 中国, 8月16–19日, 2018.

8.        (Invited) “Emerging computing hardware for future artificial intelligence”, 2018 Sino-Dutch International High Level Talent Forum, Beijing, China, Jul. 09-14, 2018.

9.        (Invited) “Nanoionics Enabled Devices and Networks for Efficient Computing”, International Conference on Memristive Materials, Devices & Systems (MEMRISYS), 2018, Beijing, China, Jul. 03-05, 2018.

10.    (Invited) “Emulation of the human brain by nanodevices at different scales”, CSTIC, Shanghai, China, Mar. 11-12, 2018.

11.    (Invited) “Switching Kinetics of Memristors by Nanoscale Characterization and Their Applications in Neuromorphic Computing”, MRS Fall Meeting, Boston, MA, USA, Nov. 27 - 30, 2017.

12.    (Invited) “Memristors for Memory and Computing Applications”, The International Photonics and Optoelectronics Meeting (POEM) 2017, Wuhan, China, Nov 3-5, 2017.

13.    (Invited) “Memristors for Emerging Memory and Computing Applications”, ASICON 2017, Guiyang, China, Oct. 25-28, 2017.

14.    (Invited) “Memristive Devices: Understanding of Filament Growth Dynamics and Computing Applications”, International Symposium of Memory Devices for Abundant Data Computing, Hongkong, Sept. 22 - 24, 2017.

15.    (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, International Workshop on Future Computing: Memristive Devices and Systems (IWOFC 2017), Beijing, China, September 1 - 2, 2017

16.    (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, The XXVI International Materials Research Congress (IMRC 2017), Cancun, Mexico, August 20 - 25, 2017

17.    (Invited) “Memristive Devices: Switching Dynamics and Computing Applications”, 3rd NANOMXCN: Mexico-China Workshop on Nano Materials/Science/Technology, Cancun, Mexico, August 19 - 21, 2017

18.    (Invited) “Deciphering Memristors for Computing Applications”, The 9th Joint Meeting of Chinese Physicists Worldwide (OCPA9), Beijing, China, July 17 - 20, 2017

19.    (Invited) “Deciphering Memristors for Computing Applications”, The 9th Joint Meeting of Chinese Physicists Worldwide (OCPA9), Beijing, China, July 17 - 20, 2017

20.    (Invited) “Ion Transport in Memristive Oxides and Its Computing Applications”, China RRAM, Soochow, China, Jun. 12 - 13, 2017.

21.    (Invited) “Resistive switching dynamics and beyond”, ICSICT, Hangzhou, China, Oct 28 2016.

22.    (Invited) “Memristive devices for brain inspired computing”, Workshop on Neuromorphic Devices and Computing Applications, Nanjing University, China, Jul 06 2016.

23.    (Invited) “Probing switching mechanism and dynamics of memristive devices”, Workshop on Memristor Theory, Device and Applications, HUST, Wuhan, China, Dec 17 2015.

24.    (Invited) “In situ TEM study on electrochemical dynamics in resistive random access memory”, 15th International Conference on Nanotechnology (IEEE Nano 2015), Rome, Italy, Jul 2015.

25.    (Invited) “Metal–Insulator Transition in Functionalized Graphene for Select Element of Resistive Memory”, MRS Spring meeting, San Francisco, CA, Apr 2014.

26.    (Invited) “RRAM filament structure and growth dynamics”, CSTIC 2014, Shanghai, China, Mar 2014.

27.   (Invited) “Brain-inspired Neuromorphic Devices and Networks”, 中国科学院青年创新促进会化学与材料分会2018年学术工作年会暨第二届能源化学与材料国际青年论坛, 2018年4月27日, 宁波.

28.   (Invited) “忆阻神经形态器件”, 2018 年“脑与类脑计算前沿”思达论坛(STARS Conference), 西双版纳, China, April 6 - 9, 2018.

29.   (keynote) “Memristive Devices for Brain Inspired Computing”, 2017年度第二届青年纳米论坛, 2017年10月30日, 北京.

Academic services

v  Guest Editor, Special Focus on Memristive Devices and Neuromorphic Computing, SCIENCE CHINA Information Sciences

v  未来计算国际研讨会(International Workshop on Future Computing)技术程序委员会主席

v  中国阻变存储器国际会议(China RRAM)技术程序委员会委员

v  固态与集成电路技术国际会议(ICSICT)技术程序委员会委员

v  2016年中国电子学会青年学术年会“神经形态器件”专题召集人

v  IEEE、MRS、ACS、RSC Member

v  中国电子学会会员

v  中国电子学会青年科学家俱乐部成员

v  35种同行评议类学术期刊包括Nature Electronics、Nature Communications、Nano Letters、Advanced Functional Materials等与业内重要学术会议ISCAS、ICSICT等审稿人。